A relaxation model for memory with high storage density.
نویسندگان
چکیده
We present a relaxation model for memory based on a generalized coulomb potential. The model has arbitrarily large storage capacity and, in addition, well-defined basins of attraction about stored memory states. The model is compared with the Hopfield relaxation model.
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عنوان ژورنال:
- Proceedings of the National Academy of Sciences of the United States of America
دوره 84 21 شماره
صفحات -
تاریخ انتشار 1987